PTFA181001E V4 T500

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 35 Efficiency 25 IM3 -38 20 -43 15 -48 10 ACPR -53 5 34 36 38 40 42 • Thermally-enhanced packages • Broadband internal matching • Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Efficiency = 36% - EVM RMS = 1.8% • Typical CW performance, 1880 MHz, 28 V - Output power at P–1dB = 120 W - Gain 15.5 dB - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power • Pb-free and RoHS compliant 30 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -23 -33 PTFA181001F Package H-37248-2 Features 2-Carrier WCDMA Drive-up -28 PTFA181001E Package H-36248-2 44 46 Average Output Power (dBm) RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 45 W, ƒ = 1879.8 MHz Characteristic Symbol Min Typ Max Unit RMS EVM — 1.8 — % Modulation Spectrum @ 400 KHz ACPR — –61 — dBc Modulation Spectrum @ 600 KHz ACPR — –73 — dBc Gain Gps — 16.5 — dB Drain Efficiency ηD — 36 — % Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 02.1, 2009-02-20 PTFA181001E PTFA181001F RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 100 W PEP, ƒ = 1850 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16 16.5 — dB Drain Efficiency ηD 39 41 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.85 — Ω Operating Gate Voltage VDS = 28 V, ID = 750 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 407 W 2.33 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC 0.43 °C/W Ordering Information Type and Version Package Type Package Description Marking PTFA181001E V4 H-36248-2 Thermally-enhanced slotted flange, single-ended PTFA181001E PTFA181001F V4 H-37248-2 Thermally-enhanced earless flange, single-ended PTFA181001F *See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 02.1, 2009-02-20 PTFA181001E PTFA181001F Typical Performance (data taken in a production test fixture) EDGE Modulation Spectrum Performance Edge EVM and Modulation Spectrum vs. Quiescent Current VDD = 28 V, IDQ = 750 mA, ƒ = 1879.8 MHz 2.4 -20 EVM 2.2 -30 2.0 -40 1.8 -50 1.6 -60 400 kHz 1.4 600 kHz 1.2 1.0 0.65 0.70 0.75 0.80 0.85 -70 -80 -20 45 Efficiency -40 35 400 kHz -60 25 -80 -100 -90 0.90 5 37 39 41 43 45 47 49 Output Power (dBm) Quiescent Current (A) EDGE EVM Performance Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 750 mA, ƒ = 1879.8 MHz (as measured in a broadband circuit) VDD = 28 V, IDQ = 750 mA, ƒ1 = 1879 MHz, ƒ2 = 1880 MHz 45 8 -20 25 2 15 EVM -30 IMD (dBc) 4 Drain Efficiency (%) 35 6 41 43 45 47 -45 -50 7th -65 49 37 Output Power (dBm) Data Sheet 5th -40 -55 5 39 -35 -60 0 37 3rd Order -25 Efficiency EVM RMS (avg. %) . 15 600 kHz Drain Efficiency (%) -10 Modulation Spectrum (dBc) 2.6 Modulation Spectrum (dBc) EVM RMS (avg. %) . VDD = 28 V, ƒ = 1879.8 MHz, POUT = 46.5 dBm 39 41 43 45 47 49 Output Power, Avg. (dBm) 3 of 11 Rev. 02.1, 2009-02-20 PTFA181001E PTFA181001F Typical Performance (cont.) Broadband CW Performance (at P-1dB) IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 750 mA VDD = 28 V, ƒ1 = 1879, ƒ2 = 1880 MHz Efficiency Gain (dB) 18 17 Output Power 16 55 50 45 Gain 15 40 14 1805 1818 1831 1844 1857 35 1883 1870 -20 -25 -30 IMD (dBc) 60 Efficiency (%), Output Power (dBm) 19 IDQ = 375 mA -35 IDQ = 1125 mA -40 -45 -50 IDQ = 750 mA -55 -60 37 39 43 45 47 Linear Broadband Performance Power Sweep VDD = 28 V, IDQ = 750 mA, POUT Avg = 47 dBm VDD = 28 V, ƒ = 1880 MHz 40 17.5 50 30 17.0 Gain 45 40 20 10 Efficiency 0 Return Loss 30 25 20 1805 -10 -20 1818 1831 1844 1857 1870 Power Gain (dB) 55 35 41 IDQ = 1125 mA 16.5 IDQ = 750 mA 16.0 15.5 15.0 IDQ = 375 mA 14.5 14.0 -30 1883 36 Frequency (MHz) Data Sheet 49 Output Power, Avg. (dBm) Gain, Return Loss (dB) Efficiency (%) Frequency (MHz) 38 40 42 44 46 48 50 52 Output Power (dBm) 4 of 11 Rev. 02.1, 2009-02-20 PTFA181001E PTFA181001F Typical Performance (cont.) Gain & Efficiency vs. Output Power Output Power (P–1dB) vs. Drain Voltage VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz IDQ = 750 mA, ƒ = 1880 MHz 18 16 45 15 35 14 25 Efficiency 13 15 12 5 36 38 40 42 44 46 48 50 Output Power (dBm) 55 Gain Drain Efficiency (%) 17 Gain (dB) 52 65 51 50 49 24 52 26 Voltage normalized to typical gate voltage, series show current TCASE = 25°C Drain Efficiency (%) -20 25 -30 ACP FC – 0.75 MHz 20 -40 15 -50 10 -60 5 -70 ACPR FC + 1.98 MHz 0 Normalized Bias Voltage (V) Efficiency Adj. Ch. Power Ratio (dBc) -10 30 -80 33 35 37 39 41 43 45 1.03 0.15 A 1.02 0.44 A 1.01 0.73 A 1.10 A 1.00 2.20 A 0.99 3.30 A 0.98 4.41 A 0.97 5.51 A 0.96 0.95 -20 47 0 20 40 60 80 100 Case Temperature (°C) Output Power, Avg. (dBm) Data Sheet 32 Bias Voltage vs. Temperature IS-95 CDMA Performance VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz TCASE = 90°C 30 Drain Voltage (V) Output Power (dBm) 35 28 5 of 11 Rev. 02.1, 2009-02-20 PTFA181001E PTFA181001F Typical Performance (cont.) Three-Carrier CDMA2000 Performance 40 -35 35 -40 30 -45 Efficiency 25 -50 -55 20 ACP Up 15 -60 10 -65 ALT Up 5 -70 ACP Low Adj. Ch. Power Ratio (dBc) Drain Efficiency (%) VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz -75 0 33 35 37 39 41 43 45 47 Output Power, Avg. (dBm) RD G E NE R Broadband Circuit Impedance Z Source Ω Frequency Z Load Ω MHz R jX R jX 1805 4.62 –6.23 1.71 2.79 1830 4.18 –6.10 1.41 2.92 1850 4.20 –6.13 1.47 3.05 1860 4.58 –6.20 1.99 3.13 1880 4.42 –6.36 1.91 3.16 Data Sheet 6 of 11 1880 MHz 1805 MHz 0.1 0.0 S Z Load Z Source 1805 MHz 0. 1 1880 MHz WA